Determination of the energy band gap of Bi2Se3-Reference-Cited by-同舟云学术

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Determination of the energy band gap of Bi2Se3

Published:2017-07-31 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Martinez G.,Piot B. A.,Hakl M.,Potemski M.,Hor Y. S.,Materna A.,Strzelecka S. G.,Hruban A.,Caha O.,Novák J.,Dubroka A.,Drašar Č.,Orlita M.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-07211-x.pdf

Reference29 articles.

1. Hasan, M. Z. & Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 82, 3045–3067 (2010).

2. Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057–1110 (2011).

3. Xia, Y. et al. Observation of a large-gap topological-insulator class with a single dirac cone on the surface. Nature Phys 5, 398–402 (2009).

4. Bianchi, M. et al. Coexistence of the topological state and a two-dimensional electron gas on the surface of bi2se3. Nature Comm. 1 (2010).

5. Kim, S. et al. Surface scattering via bulk continuum states in the 3d topological insulator bi2se3. Phys. Rev. Lett. 107, 056803 (2011).

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4. Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film;Journal of Applied Physics;2024-05-15

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