Imaging Atomic Scale Dynamics on III–V Nanowire Surfaces During Electrical Operation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-13007-w.pdf
Reference54 articles.
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2. Koenraad, P. M. & Flatté, M. E. Single dopants in semiconductors. Nature Materials 10, 91–100 (2011).
3. Del Alamo, J. Nanometre-scale electronics with III–V compound semiconductors. Nature 479, 317–323 (2011).
4. Hjort, M. et al. Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires. ACS Nano 6, 9679–9689, https://doi.org/10.1021/nn303107g (2012).
5. Johansson, S., Ghalamestani, S. G., Borg, M., Lind, E. & Wernersson, L. Temperature and annealing effects on InAs nanowire MOSFETs. Microelectronic Engineering 88, 1105–1108, Proceedings of the 17th Biennial International Insulating Films on Semiconductor Conference 17th Biennial International Insulating Films on Semiconductor Conference (2011).
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1. Introduction;Springer Theses;2022
2. Surface Functionalization of III–V Nanowires;Fundamental Properties of Semiconductor Nanowires;2020-11-17
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