Abstract
Abstract
We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.
Publisher
Springer Science and Business Media LLC
Cited by
14 articles.
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