New outcomes on how silicon enables the cultivation of Panicum maximum in soil with water restriction

Author:

Rocha Juan Ricardo,de Mello Prado Renato,de Cássia Piccolo Marisa

Abstract

AbstractClimate change increases the occurrence of droughts, decreasing the production of tropical forages through the induction of physiological stress. Si is expected to broaden the limit from physiological stress of forages grown under water restriction, which may come from an improvement in the stoichiometric homeostasis of Si with N and C, favoring physiological aspects. This study assessed whether Si supply via fertigation improves physiological aspects and the water content in the plant by means of an antioxidant defense system and changes in the C:N:Si stoichiometry during the regrowth of two cultivars of Panicum maximum grown under two soil water regimes (70 and 40% of the soil’s water retention capacity). The forages studied are sensitive to water deficit without silicon supply. The application of Si via fertigation attenuated the water deficit, favoring plant growth by stabilizing the stoichiometric homeostasis C:N and C:Si, which are responsible for increasing the plant capacity of converting accumulated C in dry mass, favoring the water content of the plant tissue and the photosynthetic efficiency. This study highlights the importance of the physiological function of Si, and effects on the stoichiometry of C and N, which are neglected in most research on forages grown under water restriction.

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior – Brasil

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3