Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-07164-1.pdf
Reference28 articles.
1. Han, S. P. et al. InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner. Opt. Express 21, 25874–25882 (2013).
2. Ostinelli, O., Alt, A. R., Lövblom, R. & Bolognesi, C. R. Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors. J.Appl.Phys. 108, 114502 (2010).
3. Chimot, N. et al. Photomixing at 1.55 μm in ion-irradiated In0.53Ga0.47As on InP. Opt. Express 14, 1856–1861 (2006).
4. Ajili, L., Scalari, G., Hoyler, N., Giovannini, M. & Faist, J. InGaAs–AlInAs∕InP terahertz quantum cascade laser. Appl. Phys. Lett. 87, 141107 (2005).
5. Vijayraghavan, K. et al. Terahertz sources based on Čerenkov difference-frequency generation in quantum cascade lasers. Appl. Phys. Lett. 100, 251104 (2012).
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