Effects of multiple cations and sintering temperature on microstructure and dielectric properties in Na1/2Ln1/2Cu3Ti4O12 (Ln = Sm and Eu) ceramic materials

Author:

Yuan Long-Fei,Zhang Ting,Han Dan-Dan

Abstract

AbstractNa1/2Eu1/2Cu3Ti4O12 and Na1/2Sm1/2Cu3Ti4O12 dielectric ceramics were synthesized at different sintering temperatures (950, 975 and 1000 °C) by a solid-state reaction method. Phase structure, cation valence state, and dielectric properties of all sintered ceramics were systematically investigated. When the preparation temperature was changed, the Cu+ ion concentration of (Na+, Eu3+) co-doped ceramics changed faster than that of (Na+, Sm3+) co-doped ceramics. Abnormally high dielectric constants of ~ 3.17 × 104 and ~ 1.06 × 104 (at 10 Hz and 303 K) were achieved in Na1/2Sm1/2Cu3Ti4O12 and Na1/2Eu1/2Cu3Ti4O12 ceramics prepared at 950 °C, respectively. However, Na1/2Sm1/2Cu3Ti4O12 and Na1/2Eu1/2Cu3Ti4O12 prepared in high sintering temperature (1000 °C) exhibited a good frequency stability of dielectric permittivity. It was demonstrated that an increasing number of charge carriers induced by the increase of sintering temperature could lead to a competitive coexistence of two polarization mechanisms (surface barrier layer capacitor and internal barrier layer capacitor), further changing the dielectric properties of CaCu3Ti4O12-based ceramics.

Funder

Youth Science Foundation of Guizhou Province Education Ministry

Scientific Research Foundation of Guizhou Province

Doctor Foundation of Zunyi Normal collage

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3