Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam-Reference-Cited by-同舟云学术

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam

Published:2017-11-30 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Belianinov Alex^ORCID,Burch Matthew J.,Hysmith Holland E.,Ievlev Anton V.,Iberi Vighter^ORCID,Susner Michael A.,McGuire Michael A.,Maksymovych Peter,Chyasnavichyus Marius,Jesse Stephen,Ovchinnikova Olga S.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-16949-3.pdf

Reference30 articles.

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3. Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS nano 8, 1102–1120 (2014).

4. Huang, Y., Liang, J. J. & Chen, Y. S. An Overview of the Applications of Graphene-Based Materials in Supercapacitors. Small 8, 1805–1834, https://doi.org/10.1002/smll.201102635 (2012).

5. Osada, M. & Sasaki, T. Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks. Advanced Materials 24, 210–228, https://doi.org/10.1002/adma.201103241 (2012).

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