High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time-Reference-Cited by-同舟云学术

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High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time

Published:2018-08-01 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lee Hyejoo,Ahn Jongtae,Im Seongil,Kim Jiyoung,Choi Woong

Funder

National Research Foundation of Korea (NRF)

Ministry of Trade, Industry and Energy, Korea | Korea Evaluation Institute of Industrial Technology (KEIT)

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-29942-1.pdf

Reference34 articles.

1. Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

2. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).

3. Splendiani, A. et al. Emerging Photoluminescence in Monolayer MoS2. Nano Lett. 10, 1271–1275 (2010).

4. Mak, K. F. et al. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

5. Radisavljevic, B. et al. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).

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