Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold-Reference-Cited by-同舟云学术

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Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold

Published:2018-08-01 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Jaros Angelina,Hartmann Jana,Zhou Hao,Szafranski Barbara,Strassburg Martin,Avramescu Adrian,Waag Andreas,Voss Tobias

Funder

Deutsche Forschungsgemeinschaft (German Research Foundation)

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-29981-8.pdf

Reference23 articles.

1. Hahn, B., Galler, B. & Eng, K. Development of high-efficiency and high-power vertical light emitting diodes. Japanese Journal of Applied Physics 53, 100208 (2014).

2. Waag, A. et al. The nanorod approach: GaN NanoLEDs for solid state lighting. Physica Status Solidi (C) Current Topics in Solid State Physics 8, 2296–2301 (2011).

3. Mandl, M. et al. Group III nitride core-shell nano- and microrods for optoelectronic applications. Physica Status Solidi - Rapid Research Letters 7, 800–814 (2013).

4. Hong, Y. J. et al. Visible-color-tunable light-emitting diodes. Advanced Materials 23, 3284–3288 (2011).

5. Jung, B. O. et al. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode. Nanoscale Research Letters 11, 215 (2016).

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