Pressure effect on impurity local vibrational mode and phase transitions in n-type iron-doped indium phosphide
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-19679-2.pdf
Reference56 articles.
1. Chang, E. Y., Kuo, C. I., Hsu, H. T., Chiang, C. Y. & Miyamoto, Y. InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications. Appl. Phys. Express 6, 034001 (2013).
2. Tapster, P. R. et al. Optical and capacitance spectroscopy of iron-doped indium phosphide. J. Phys. C 14, 5069 (1981).
3. Cesca, T. et al. Atomic environment of Fe following high-temperature implantation in InP. Phys. Rev. B 68, 224113 (2003).
4. Zhao, Y. W. et al. Effects of annealing on the electrical properties of Fe-doped InP. J. Appl. Phys. 86(2), 15 (1999).
5. Shannon, R. D. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallographica A32, 751 (1976).
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