S-band hybrid amplifiers based on hydrogenated diamond FETs
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Published:2020-11-04
Issue:1
Volume:10
Page:
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ISSN:2045-2322
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Container-title:Scientific Reports
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language:en
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Short-container-title:Sci Rep
Author:
Ciccognani Walter,Colangeli Sergio,Verona Claudio,Di Pietrantonio Fabio,Cannatà Domenico,Benetti Massimiliano,Camarchia Vittorio,Pirola Marco,Longhi Patrick E.,Verona Rinati Gianluca,Marinelli Marco,Limiti Ernesto
Abstract
Abstract
The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth.
Funder
Agenzia Spaziale Italiana
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
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