Author:
Yun Kuk Hyun,Lee Bong Jae,Lee Seong Hyuk
Abstract
AbstractThe thermal management of semiconductors at the device level has become a crucial issue owing to the high integration density and miniaturization of microelectronic systems. Because surface phonon polaritons (SPhPs) exhibit long propagation lengths, they are expected to contribute significantly to the heat dissipation in microelectronic systems. This study aims to numerically estimate the heat transfer due to SPhPs in a thin SiO2 film. The one-dimensional Boltzmann transport equation (BTE) is solved using the estimated propagation length based on the SPhP dispersion curves. The temperature profiles and heat fluxes are predicted and demonstrate the size effect of the film on the effective in-plane thermal conductivity of the SiO2 film. The results indicate that the temperature distribution was constant regardless of the film length and thickness because the propagation length was much longer than the film length. In addition, the heat flux increased with decreasing film thickness owing to the depth-averaged energy transfer. The effective thermal conductivities predicted using the BTE differed by ~ 16.5% from the values obtained from the analytical expression. The numerical results of this study can provide valuable data when studying the thermal behavior of SPhPs.
Funder
National Research Foundation of Korea
Chung-Ang University
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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