Long-term drift of Si-MOS quantum dots with intentional donor implants
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-43995-w.pdf
Reference23 articles.
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2. Dial, O. et al. Charge noise spectroscopy using coherent exchange oscillations in a singlet-triplet qubit. Phys. Rev. Lett. 110, 146804 (2013).
3. Eng, K. et al. Isotopically enhanced triple-quantum-dot qubit. Sci. Advances 1, e1500214 (2015).
4. Zimmerman, N. M. et al. Why the long-term charge offset drift in si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability. J. Appl. Phys. 104, 033710 (2008).
5. Zimmerman, N. M., Yang, C.-H., Lai, N. S., Lim, W. H. & Dzurak, A. S. Charge offset stability in si single electron devices with al gates. Nanotechnology 25, 405201 (2014).
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