Author:
Taz Humaira,Prasad Bhagwati,Huang Yen-Lin,Chen Zuhuang,Hsu Shang-Lin,Xu Ruijuan,Thakare Vishal,Sakthivel Tamil Selvan,Liu Chenze,Hettick Mark,Mukherjee Rupam,Seal Sudipta,Martin Lane W.,Javey Ali,Duscher Gerd,Ramesh Ramamoorthy,Kalyanaraman Ramki
Abstract
AbstractA room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.
Publisher
Springer Science and Business Media LLC
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