On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-05067-9.pdf
Reference35 articles.
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4. Castera, P., Tulli, D., Gutierrez, A. M. & Sanchis, P. Influence of BaT i O 3 ferroelectric orientation for electro-optic modulation on silicon. Optics Express 23, 15332–15342 (2015).
5. Melikyan, A. et al. High-speed plasmonic phase modulators. Nature Photonics 5–9 (2014).
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