Abstract
AbstractThe microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magnetoresistance effect exhibits substantially increased broadening with increasing microwave intensity. These magnetoresistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, Te, due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.
Publisher
Springer Science and Business Media LLC
Reference69 articles.
1. Mani, R. G. et al. Zero-resistance states induced by electromagnetic wave excitation in GaAs/AlGaAs heterostructures. Nature 420, 646–650 (2002).
2. Zudov, M. A., Du, R. R., Pfeiffer, L. N. & West, K. W. Evidence for a new dissipationless effect in 2D electronic transport. Phys. Rev. Lett. 90, 046807-1-4 (2003).
3. Mani, R. G. et al. Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices. Phys. Rev. Lett. 92, 146801-1-4 (2004).
4. Kovalev, A. E., Zvyagin, S. A., Bowers, C. R., Reno, J. L. & Simmons, J. A. Observation of a node in the quantum oscillations induced by microwave radiation. Sol. St. Comm. 130, 379–381 (2004).
5. Mani, R. G. et al. Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices. Phys. Rev. B. 69, 161306-1-4 (2004).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献