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Springer Science and Business Media LLC
Reference40 articles.
1. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges. Adv. Mater. 21, 2632–2663 (2009).
2. Ohta, S., Nomura, T., Ohta, H. & Koumoto, K. High-temperature carrier transport and thermoelectric properties of heavily La- or Nb-doped SrTiO3 single crystals. J. Appl. Phys. 97 (2005).
3. Rodenbücher, C. et al. Cluster-like resistive switching of SrTiO3:Nb surface layers. New J. Phys. 15, 103017 (2013).
4. Park, J., Kwon, D.-H., Park, H., Jung, C. U. & Kim, M. Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3. Appl. Phys. Lett. 105, 183103 (2014).
5. Yang, M. et al. Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO3 junctions. J. Appl. Phys. 115, 134505/1- (2014).
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