Resistive switching in nano-structures

Author:

Karpov V. G.,Niraula D.ORCID

Funder

Semiconductor Research Corporation (SRC)

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference45 articles.

1. Phase Change Memory: Device Physics, Reliability and Applications, Edited by Redaelli, Andrea (Editor) (Springer 2017).

2. Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, Edited by Ielmini, Daniele & Waser, Rainer (Wiley-VCH, 2016).

3. Wang, Z. et al. Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications. Advanced Functional Materials 28, 1704862 (2018).

4. Lombardo, S. et al. Dielectric breakdown mechanisms in gate oxides. J. Appl. Phys. 98, 121301, https://doi.org/10.1063/1.2147714 (2005).

5. Karpov, V. G., Kryukov, Y. A., Karpov, I. V. & Mitra, M. Field-induced nucleation in phase change memory. Phys. Rev. B 78, 052201 (2008).

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