Funder
Semiconductor Research Corporation (SRC)
Publisher
Springer Science and Business Media LLC
Reference45 articles.
1. Phase Change Memory: Device Physics, Reliability and Applications, Edited by Redaelli, Andrea (Editor) (Springer 2017).
2. Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, Edited by Ielmini, Daniele & Waser, Rainer (Wiley-VCH, 2016).
3. Wang, Z. et al. Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications. Advanced Functional Materials 28, 1704862 (2018).
4. Lombardo, S. et al. Dielectric breakdown mechanisms in gate oxides. J. Appl. Phys. 98, 121301,
https://doi.org/10.1063/1.2147714
(2005).
5. Karpov, V. G., Kryukov, Y. A., Karpov, I. V. & Mitra, M. Field-induced nucleation in phase change memory. Phys. Rev. B 78, 052201 (2008).
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