Author:
Wang Xuhu,Li Wang,Jin Li,Gong Meimei,Wang Junqiang,Zhong Yujie,Ruan Yi,Guo Chunhong,Xin Chenguang,Li Mengwei
Abstract
AbstractA high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation technique to enhance the resolution by translating the sine-cosine outputs of a TMR sensor into an output that varies linearly with the displacement. Simultaneously, using the multi-bridge circuit method to suppress external magnetic and geomagnetic interference. Experimental result shows that the micro-displacement sensor has a resolution of 800 nm, accuracy of 0.14$$\%$$
%
and a full-scale range of up to millimeter level. This work enables a high-performance displacement sensor, and provides a significant guide for the design of a micro-displacement sensor in practical applications.
Funder
National Natural Science Foundation of China
Shanxi Province Science Foundation for Youths
Scientific and Technological Innovation Programs of Higher Education Institution in Shanxi
Science Foundation of North University of China
Publisher
Springer Science and Business Media LLC
Cited by
7 articles.
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