Author:
Wu Yingna,Ding Liang,Li Na,Yu Xin
Abstract
AbstractIn this study, we investigate the influence of global innovation networks (GINs) on the innovation output of semiconductor firms. Utilizing negative binomial regression and network analysis, we assess how network positions, specifically degree, betweenness, and closeness centrality, affect firms’ innovation performance, revealing significant positive impacts. Moreover, our results identify a positive U-shaped relationship between structural holes in GINs and innovation performance, suggesting that while moderate network engagement aids innovation, too much can be detrimental. This research provides key insights into optimizing GIN participation for better innovation results in the competitive semiconductor sector.
Publisher
Springer Science and Business Media LLC
Reference40 articles.
1. Ernst, D. A new geography of knowledge in the electronics industry? East west center. Policy Stud. https://doi.org/10.2139/ssrn.2742923 (2009).
2. Kollmann, M., Hannigan, T. J. & Mudambi, R. Global innovation networks—Organizations and people. J. Int. Manag. 23(10), 66–132 (2017).
3. Sachwald, F. Location choices within global innovation networks: The case of Europe. J. Technol. Transf. 33, 364–378 (2008).
4. Cooke, P. Complex spaces: Global innovation networks & territorial innovation systems in information & communication technologies. J. Open Innov. Technol. Market Complex. 3(1), 9–18 (2017).
5. Ale, E. N. & Bong, Y. Open innovation: A bibliometric study. Innov. Study 6(3), 77–116 (2017).
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