Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

Abstract

AbstractUsing the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 10$$^5$$ 5 under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 10$$^4$$ 4 . Our calculated transmission spectra have nicely explained why there’s a GMR up to 10$$^5$$ 5 for spin-up current at biases of $$-1.2$$ - 1.2 V, $$-1.1$$ - 1.1 V, and $$-1.0$$ - 1.0 V, and also accounted for a GMR up to 10$$^3$$ 3 –10$$^5$$ 5 for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 10$$^4$$ 4 . Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.