A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-15556-6.pdf
Reference33 articles.
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3. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature. 453, 80–83 (2008).
4. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges. Adv. Mater. 21, 2632–2663, https://doi.org/10.1002/adma.200900375 (2009).
5. Pertsev, N. & Kohlstedt, H. Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates. Nanotechnology 21, 475202 (2010).
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