Erratum: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Erratum: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

Published:2017-05-08 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Cho Yong-Jin,Summerfield Alex,Davies Andrew,Cheng Tin S.,Smith Emily F.,Mellor Christopher J.,Khlobystov Andrei N.,Foxon C. Thomas,Eaves Laurence,Beton Peter H.,Novikov Sergei V.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep46799.pdf

Reference1 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Functionalized hexagonal boron nitride bilayers: desirable electro-optical properties for optoelectronic applications;Physical Chemistry Chemical Physics;2024

2. Large-area single-crystal hexagonal boron nitride: From growth mechanism to potential applications;Chemical Physics Reviews;2023-11-15

3. Hexagonal boron nitride monolayers on metal supports: Versatile templates for atoms, molecules and nanostructures;Surface Science Reports;2019-03

4. Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling;Journal of Crystal Growth;2018-04

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