Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Theis, T. N. & Wong, H.-S. P. The end of Moore’s Law: a new beginning for information technology. Comput. Sci. Eng. 19, 41–50 (2017).
2. Taur, Y., Wann, C. H. & Frank, D. J. 25 nm CMOS design considerations. In International Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217) 789–792 (IEEE, 1998).
3. Stillmaker, A. & Baas, B. Scaling equations for the accurate prediction of CMOS device performance from 180 nm to 7 nm. Integration 58, 74–81 (2017).
4. Salahuddin, S. & Datta, S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett. 8, 405–410 (2008).
5. Böscke, T., Müller, J., Bräuhaus, D., Schröder, U. & Böttger, U. Ferroelectricity in hafnium oxide thin films. Appl. Phys. Lett. 99, 102903 (2011).
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献