Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography-Reference-Cited by-同舟云学术

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Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

Published:2017-03 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Wang Sheng-Wen,Hong Kuo-Bin,Tsai Yu-Lin,Teng Chu-Hsiang,Tzou An-Jye,Chu You-Chen,Lee Po-Tsung,Ku Pei-Cheng,Lin Chien-Chung,Kuo Hao-Chung

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep42962.pdf

Reference29 articles.

1. Bai, J., Wang, T. & Sakai, S. Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. J. Appl. Phys. 88, 4729 (2000).

2. Yamamoto, S. et al. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20–21) GaN Substrates. Appl. Phys. Express 3, 122102 (2010).

3. Lee, Y.-C., Ni, C.-H. & Chen, C.-Y. Enhancing light extraction mechanisms of GaN-based light-emitting diodes through the integration of imprinting microstructures, patterned sapphire substrates, and surface roughness. Opt. Express 18, A489–A498 (2010).

4. Hangleiter, A. et al. Towards understanding the emission efficiency of nitride quantum wells. Phys. stat. sol. (a) 201, 2808–2813 (2004).

5. Ryou, J. H. et al. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells. IEEE J. Sel. Topics Quantum Electron 15, 1080–1091 (2009).

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