Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si-Reference-Cited by-同舟云学术

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Published:2018-06-13 Issue:1 Volume:7 Page:
ISSN:2047-7538
Container-title:Light: Science & Applications
language:en
Short-container-title:Light Sci Appl

Author:

Sun Yi^ORCID,Zhou Kun,Feng Meixin,Li Zengcheng,Zhou Yu,Sun Qian,Liu Jianping,Zhang Liqun,Li Deyao,Sun Xiaojuan,Li Dabing^ORCID,Zhang Shuming,Ikeda Masao,Yang Hui

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41377-018-0008-y.pdf

Reference32 articles.

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2. Wierer, J. J. Jr, Tsao, J. Y. & Sizov, D. S. Comparison between blue lasers and light-emitting diodes for future solid-state lighting. Laser Photonics Rev. 7, 963–993 (2013).

3. Nakamura, S. et al. High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates. Jpn J. Appl. Phys. 37, L309–L312 (1998).

4. Wierer, J. J. Jr, Tsao, J. Y. & Sizov, D. S. The potential of III-nitride laser diodes for solid-state lighting. Phys. Status Solidi C 11, 674–677 (2014).

5. Tsonev, D., Videv, S. & Haas, H. Towards a 100Gb/s visible light wireless access network. Opt. Express 23, 1627–1637 (2015).

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