Abstract
AbstractTransition metal d-electron oxides with an odd number of electrons per unit cell are expected to form metals with partially occupied energy bands, but exhibit in fact a range of behaviors, being either insulators, or metals, or having insulator-metal transitions. Traditional explanations involved predominantly electron-electron interactions in fixed structural symmetry. The present work focuses instead on the role of symmetry breaking local structural motifs. Viewing the previously observed V-V dimerization in VO2 as a continuous knob, reveals in density functional calculations the splitting of an isolated flat band from the broad conduction band. This leads past a critical percent dimerization to the formation of the insulating phase while lowering the total energy. In VO2 this transition is found to have a rather low energy barrier approaching the thermal energy at room temperature, suggesting energy-efficient switching in neuromorphic computing. Interestingly, sufficient V-V dimerization suppresses magnetism, leading to the nonmagnetic insulating state, whereas magnetism appears when dimerization is reduced, forming a metallic state. This study opens the way to design novel functional quantum materials with symmetry breaking-induced flat bands.
Funder
National Science Foundation
DOE | SC | Basic Energy Sciences
Publisher
Springer Science and Business Media LLC
Reference60 articles.
1. Mott, N. F. Metal-Insulator Transitions. (Taylor and Francis, 1990).
2. West, A. R. Solid State Chemistry and its Applications. (John Wiley & Sons, 1998).
3. Imada, M., Fujimori, A. & Tokura, Y. Metal-insulator transitions. Rev. Mod. Phys. 70, 1039–1263 (1998).
4. Zhang, L. et al. Correlated metals as transparent conductors. Nat. Mater. 15, 204–210 (2016).
5. Morin, F. J. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature. Phys. Rev. Lett. 3, 34–36 (1959).