Abstract
AbstractThe bulk photovoltaic effect (BPVE) occurs when homogeneous noncentrosymmetric materials generate photocurrent or photovoltage under illumination. The intrinsic contribution to this effect is known as the shift current effect. We calculate the shift current conductivities of the ferroelectric SnTe monolayer using first-principles methods. Our results reveal a giant shift-current conductivity near the valley points in the SnTe monolayer. More remarkably, the linear optical absorption coefficient at this energy is very small, resulting in an enormous Glass coefficient that is four orders of magnitude larger than that of BaTiO3. To understand these giant shift-current effects, we employ a three-band model and find that they arise from the nontrivial energy band geometries near the valley points, where the shift-vector diverges. This serves as a prominent example highlighting the crucial role of band geometry in determining the fundamental properties of solids.
Publisher
Springer Science and Business Media LLC
Subject
Computer Science Applications,Mechanics of Materials,General Materials Science,Modeling and Simulation
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