Abstract
AbstractAn extraordinary sensing ability of the SnP3-based single-material logical junction for harmful NOx gases was explored in the present work through a set of first-principles electronic structure calculations. As a sensing platform, a metal-semiconductor-metal lateral junction composed of a single material was designed based on the metallic/semiconducting characteristics of trilayer/monolayer SnP3. Lacking a Schottky barrier at the electrode-channel interface, the gas-specific charge transfer between the SnP3 layer and gas molecules was precisely detected based on the current-voltage characteristics. NOx gases with strong adsorption strength and charge transfer amount on the SnP3 substrate were shown to be particularly well detected in this manner, in terms of either the absolute magnitude of the current or negative differential resistance (NDR) at a reasonably small bias voltage as a sensing signal. This work will provide a new pathway to design a Schottky barrier-free metal-semiconductor junction for highly sensitive sensor applications.
Funder
National Research Foundation of Korea
National Research Council of Science and Technology
Korea Institute of Science and Technology Information
Deutsche Forschungsgemeinschaft
Publisher
Springer Science and Business Media LLC
Subject
Computer Science Applications,Mechanics of Materials,General Materials Science,Modeling and Simulation
Cited by
2 articles.
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