Rogue waves lead to the instability in GaN semiconductors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep12245.pdf
Reference42 articles.
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2. Trew, R. J., Green, D. S. & Shealy, J. B. AlGaN/GaN HFET reliability. IEEE Microw. Mag. 10, 116–127 (2009).
3. Mishra, U. K., Shen, L., Kazior, T. E. & Wu, Y.-F. GaN-based RF power devices and amplifiers. Proc. of the IEEE. Vol. 96, 287–305, (2008).
4. Yan, Z. et al. Graphene quilts for thermal management of high-power GaN transistors. Nat. Commun. 3, 827 (2012).
5. Tirado, J. M., Sanchez-Rojas, J. L. & Izpura, J. I. Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices. IEEE Trans. Electron Devices 54, 410 (2007).
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