Author:
Shepley P. M.,Rushforth A. W.,Wang M.,Burnell G.,Moore T. A.
Publisher
Springer Science and Business Media LLC
Reference35 articles.
1. Fukami, S. et al. Low-current perpendicular domain wall motion cell for scalable high-speed MRAM. Symp. on VLSI Tech. 230 (2009).
2. Miron, I. M. et al. Fast current-induced domain-wall motion controlled by the Rashba effect. Nature Mater. 10, 419–423 (2011).
3. Emori, S., Bauer, U., Ahn, S.-M., Martinez, E. & Beach, G. S. D. Current-driven dynamics of chiral ferromagnetic domain walls. Nature Mater. 12, 611–616 (2013).
4. Ryu, K.-S., Thomas, L., Yang, S.-H. & Parkin, S. Chiral spin torque at magnetic domain walls. Nature Nanotech. 8, 527–533 (2013).
5. Wang, K. L., Alzate, J. G. & Khalili Amiri, P. Low-power non-volatile spintronic memory: STT-RAM and beyond. J. Phys. D 46, 074003 (2013).
Cited by
89 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献