Fabrication and Electrical Properties of Stacked Graphene Monolayers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05065.pdf
Reference22 articles.
1. Li, X. et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 324, 1312–1314 (2009).
2. Suk, J. W. et al. Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates. ACS Nano 5, 6916–6924 (2011).
3. Britnell, L. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science 335, 947–950 (2012).
4. Dean, C. R. et al. Boron Nitride Substrates for High-Quality Graphene Electronics. Nat. Nano. 5, 722–726 (2010).
5. Yang, H. et al. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science 336, 1140–1143 (2012).
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