Room temperature electrical spin injection into GaAs by an oxide spin injector
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05588.pdf
Reference32 articles.
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3. Lou, X. et al. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Phys. 3, 197–202 (2007).
4. Tran, M. et al. Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. Phys. Rev. Lett. 102, 036601 (2009).
5. Dash, S. P., Sharma, S., Patel, R. S., Jong, M. P. & Jansen, R. Electrical creation of spin polarization in silicon at room temperature. Nature 462, 491–494 (2009).
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