Valley spin polarization by using the extraordinary Rashba effect on silicon-Reference-Cited by-同舟云学术

Valley spin polarization by using the extraordinary Rashba effect on silicon

Published:2013-06-28 Issue:1 Volume:4 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Sakamoto Kazuyuki,Kim Tae-Hwan,Kuzumaki Takuya,Müller Beate,Yamamoto Yuta,Ohtaka Minoru,Osiecki Jacek R.,Miyamoto Koji,Takeichi Yasuo,Harasawa Ayumi,Stolwijk Sebastian D.,Schmidt Anke B.,Fujii Jun,Uhrberg R. I. G.,Donath Markus,Yeom Han Woong,Oda Tatsuki

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms3073.pdf

Reference32 articles.

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3. Kikkawa, J. M. & Awschalom, D. D. Lateral drag of spin coherence in gallium arsenide. Nature 397, 139–141 (1999).

4. Wolf, S. A. et al. Spintronics: a spin-based electronics vision for the future. Science 294, 1388–1495 (2001).

5. Zŭtić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).

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