Editors’ Choice 2023
Author:
Publisher
Springer Science and Business Media LLC
Link
https://www.nature.com/articles/s44172-023-00151-7.pdf
Reference29 articles.
1. Roccaforte, F. et al. Challenges for energy efficient wide band gap semiconductor power devices. Phys. Status Solidi A 211, 2063–2071, https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201300558 (2014).
2. Rescher, G., Pobegen, G., Aichinger, T. & Grasser, T. On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs. In: 2016 IEEE International Electron Devices Meeting (IEDM), 10.8.1–10.8.4 (Dec. 2016).
3. Feil, M. W. et al. Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors. Commun. Eng. 2, 5 (2023).
4. Eustache, E. et al. Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors. Semicond. Sci. Technol. 36, 065018 (2021).
5. Liu, M. et al. Epitaxial GeSn/Ge vertical nanowires for p-type field-effect transistors with enhanced performance. ACS Appl. Nano Mater. 4, 94–101 (2021).
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