Author:
Park Ji-Hyeon,Mandal Arjun,Kang San,Chatterjee Uddipta,Kim Jin Soo,Park Byung-Guon,Kim Moon-Deock,Jeong Kwang-Un,Lee Cheul-Ro
Publisher
Springer Science and Business Media LLC
Reference39 articles.
1. Bhattacharya, P. & Mi, Z. Quantum-dot optoelectronic devices. Proc. IEEE 95, 1723–1740 (2007).
2. Schubert, E. F. Light-emitting diodes. Cambridge University Press. 10.1109/PROC.1972.8592 (Cambridge University Press, 2010).
3. Fujii, K., Karasawa, T. & Ohkawa, K. Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation. Japanese J. Appl. Physics, Part 2 Lett. 44, 4–7 (2005).
4. Fujii, K. & Ohkawa, K. Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN. Jpn. J. Appl. Phys. 44, L909–L911 (2005).
5. Theuwis, A., Strubbe, K., Depestel, L. M. & Gomes, W. P. A Photoelectrochemical Study of InxGa1-xN Films. J. Electrochem. Soc. 149, E173 (2002).
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献