Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep33395.pdf
Reference32 articles.
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3. Kane, C. L. & Mele, E. J. Z2 Topological Order and the Quantum Spin Hall Effect Phys. Rev. Lett. 95, 146802 (2005).
4. Bernevig, B. A., Hughes, T. L. & Zhang, S.-C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757–1761 (2006).
5. Zhang, D. et al. Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells. Phys. Rev. Lett. 111, 156402 (2013).
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