Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Link
http://www.nature.com/articles/ncomms15387.pdf
Reference49 articles.
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3. Maruyama, T. et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotech. 4, 158–161 (2009).
4. Nozaki, T., Shiota, Y., Shiraishi, M., Shinjo, T. & Suzuki, Y. Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions. Appl. Phys. Lett. 96, 022506 (2010).
5. Shiota, Y. et al. Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. Nat. Mater. 11, 39–43 (2012).
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