Atomic Scale Verification of Oxide-Ion Vacancy Distribution near a Single Grain Boundary in YSZ-Reference-Cited by-同舟云学术

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Atomic Scale Verification of Oxide-Ion Vacancy Distribution near a Single Grain Boundary in YSZ

Published:2013-09-17 Issue:1 Volume:3 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

An Jihwan,Park Joong Sun,Koh Ai Leen,Lee Hark B.,Jung Hee Joon,Schoonman Joop,Sinclair Robert,Gür Turgut M.,Prinz Fritz B.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep02680.pdf

Reference20 articles.

1. Shim, J. H., Chao, C.-C., Huang, H. & Prinz, F. B. Atomic layer deposition of yttria-stabilized zirconia for solid oxide fuel cells. Chem. Mater. 19, 3850–3854 (2007)

2. Aoki, M. et al. Solute segregation and grain boundary impedance in high purity stabilized zirconia. J. Am. Ceram. Soc. 79, 1169–1180 (1996).

3. Guo, X. & Maier, J. Grain boundary blocking effect in zirconia: A Schottky barrier analysis. J. Electrochem. Soc. 148, E121–E126 (2001).

4. Shim, J. H. et al. Enhanced oxygen exchange and incorporation at surface grain boundaries on an oxide ion conductor. Acta Mater. 60, 1–6 (2012).

5. Lee, W. Y. et al. Oxygen surface exchange at grain boundaries of oxide ion conductors. Adv. Funct. Mater. 22, 965–971 (2011).

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