Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field-Reference-Cited by-同舟云学术

Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field

Published:2022-08-11 Issue:10 Volume:17 Page:1078-1083
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nat. Nanotechnol.

Author:

Domaretskiy Daniil^ORCID,Philippi Marc,Gibertini Marco,Ubrig Nicolas^ORCID,Gutiérrez-Lezama Ignacio,Morpurgo Alberto F.^ORCID

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Swiss National Science Foundation | National Center of Competence in Research Affective Sciences - Emotions in Individual Behaviour and Social Processes

Ministero dell'Istruzione, dell'Università e della Ricerca

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Bioengineering

Link

https://www.nature.com/articles/s41565-022-01183-4.pdf

Reference52 articles.

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2. Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F. & Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices. Nat. Mater. 7, 151–157 (2008).

3. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).

4. Mak, K. F., Lui, C. H., Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009).

5. Ramasubramaniam, A., Naveh, D. & Towe, E. Tunable band gaps in bilayer transition-metal dichalcogenides. Phys. Rev. B 84, 205325 (2011).

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