Interface Structure of MoO3 on Organic Semiconductors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep21109.pdf
Reference32 articles.
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3. Qiu, J., Wang, Z. B., Helander, M. G. & Lu, Z. H. MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl for low voltage organic light emitting diodes. Appl. Phys. Lett. 99, 153305 (2011).
4. Matsushima, T., Kinoshita, Y. & Murata, H. Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers. Appl. Phys. Lett. 91, 253504 (2007).
5. Tokito, S., Noda, K. & Taga, Y. Metal oxides as a hole-injecting layer for an organic electroluminescent device. J. Phys. D: Appl. Phys. 29, 25750–2753 (1996).
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