Interface dynamics and crystal phase switching in GaAs nanowires-Reference-Cited by-同舟云学术

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Interface dynamics and crystal phase switching in GaAs nanowires

Published:2016-03 Issue:7594 Volume:531 Page:317-322
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Jacobsson Daniel,Panciera Federico,Tersoff Jerry,Reuter Mark C.,Lehmann Sebastian,Hofmann Stephan,Dick Kimberly A.,Ross Frances M.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/nature17148.pdf

Reference46 articles.

1. Krogstrup, P. et al. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111). Nano Lett. 10, 4475–4482 (2010)

2. Ikejiri, K., Kitauchi, Y., Tomioka, K., Motohisa, J. & Fukui, T. Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires. Nano Lett. 11, 4314–4318 (2011)

3. Husanu, E., Ercolani, D., Gemmi, M. & Sorba, L. Growth of defect-free GaP nanowires. Nanotechnology 25, 205601 (2014)

4. Caroff, P. et al. Controlled polytypic and twin-plane superlattices in III–V nanowires. Nature Nanotechnol. 4, 50–55 (2009)

5. Koguchi, M., Kakibayashi, H., Yazawa, M., Hiruma, K. & Katsuyama, T. Crystal structure change of GaAs and InAs whiskers from zinc-blende to wurtzite type. Jpn J. Appl. Phys. 31, 2061–2065 (1992)

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