Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep18264.pdf
Reference28 articles.
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4. Salehi-Fashami, M., Atulasimha, J. & Bandyopadhyay, S. Magnetization dynamics, throughput and energy dissipation in a universal multiferroic nanomagnetic logic gate with fan-in and fan-out. Nanotechnology 23, 105201 (2012).
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