Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory-Reference-Cited by-同舟云学术

Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory

Published:2015-12-14 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ahmad Hasnain,Atulasimha Jayasimha,Bandyopadhyay Supriyo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep18264.pdf

Reference28 articles.

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2. Roy, K., Bandyopadhyay, S. & Atulasimha, J. Binary switching in a symmetric potential landscape. Sci. Rep. 3, 3038 (2013).

3. Alam, M. T. et al. On-chip clocking for nanomagnetic logic devices. IEEE Trans. Nanotechnol. 9, 348 (2010).

4. Salehi-Fashami, M., Atulasimha, J. & Bandyopadhyay, S. Magnetization dynamics, throughput and energy dissipation in a universal multiferroic nanomagnetic logic gate with fan-in and fan-out. Nanotechnology 23, 105201 (2012).

5. Ralph, D. C. & Stiles, M. D. Spin transfer torques. J. Magn. Magn. Mater. 320, 1190 (2008).

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