Conduction band structure of high-mobility organic semiconductors and partially dressed polaron formation-Reference-Cited by-同舟云学术

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Conduction band structure of high-mobility organic semiconductors and partially dressed polaron formation

Published:2022-07-18 Issue:8 Volume:21 Page:910-916
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nat. Mater.

Author:

Sato Haruki,Abd. Rahman Syed A.,Yamada Yota,Ishii Hiroyuki^ORCID,Yoshida Hiroyuki^ORCID

Funder

MEXT | Japan Science and Technology Agency

MEXT | Japan Society for the Promotion of Science

MEXT | JST | Core Research for Evolutional Science and Technology

University of Tsukuba, Pre-Strategic Initiatives

MEXT | JST | Precursory Research for Embryonic Science and Technology

Futaba Research Grant Program of the Futaba Foundation

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.nature.com/articles/s41563-022-01308-z.pdf

Reference59 articles.

1. Karl, N. Charge carrier transport in organic semiconductors. Synth. Met. 133–134, 649–657 (2003).

2. Podzorov, V., Menard, E., Rogers, J. A. & Gershenson, M. E. Hall effect in the accumulation layers on the surface of organic semiconductors. Phys. Rev. Lett. 95, 226601 (2005).

3. Hasegawa, T. & Takeya, J. Organic field-effect transistors using single crystals. Sci. Technol. Adv. Mater. 10, 024314 (2009).

4. Lin, Y. J., Tsao, H. Y. & Liu, D. S. Hall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperature. Appl. Phys. Lett. 101, 013302 (2012).

5. Marumoto, K., Kuroda, S. I., Takenobu, T. & Iwasa, Y. Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance. Phys. Rev. Lett. 97, 256603 (2006).

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