Pressure-engineered optical properties and emergent superconductivity in chalcopyrite semiconductor ZnSiP2

Author:

Yuan Yifang,Zhu Xiangde,Zhou YonghuiORCID,Chen Xuliang,An Chao,Zhou Ying,Zhang Ranran,Gu Chuanchuan,Zhang LiliORCID,Li XinjianORCID,Yang ZhaorongORCID

Abstract

AbstractChalcopyrite II-IV-V2 semiconductors are promising materials in nonlinear optical, optoelectronic, and photovoltaic applications. In this work, pressure-tailored optical properties as well as pressure-driven emergent superconductivity in chalcopyrite ZnSiP2 are reported via photoluminescence (PL) spectroscopy and electrical transport experiments. During compression, the PL peak energy exhibits a plateau between 1.4 and 8.7 GPa, which is accompanied by a piezochromic transition and correlated with the progressive development of cation disorder. Upon further compression across a phase transition from tetragonal to cubic rock-salt structure, superconductivity with a critical temperature Tc ~ 8.2 K emerges immediately. Tc decreases in the range of 24.6–37.1 GPa but inversely increases at higher pressures, thereby exhibiting an unusual V-shaped superconducting phase diagram. These findings present vivid structure–property relationships, which not only offer important clues to optimize the optical and electronic properties, but also provide a new way to use compression to switch between different functionalities.

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Modeling and Simulation,Condensed Matter Physics,General Materials Science,Modeling and Simulation

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