Abstract
AbstractApplying a temperature gradient in a magnetic material generates a voltage that is perpendicular to both the heat flow and the magnetization. This phenomenon is the anomalous Nernst effect (ANE), which was long thought to be proportional to the value of the magnetization. However, more generally, the ANE has been predicted to originate from a net Berry curvature of all bands near the Fermi level (EF). Subsequently, a large anomalous Nernst thermopower ($${\boldsymbol{S}}_{{\boldsymbol{yx}}}^{\boldsymbol{A}}$$
S
yx
A
) has recently been observed in topological materials with no net magnetization but a large net Berry curvature [Ωn(k)] around EF. These experiments clearly fall outside the scope of the conventional magnetization model of the ANE, but a significant question remains. Can the value of the ANE in topological ferromagnets exceed the highest values observed in conventional ferromagnets? Here, we report a remarkably high $${\boldsymbol{S}}_{{\boldsymbol{yx}}}^{\boldsymbol{A}}$$
S
yx
A
-value of ~6.0 µV K−1 in the ferromagnetic topological Heusler compound Co2MnGa at room temperature, which is approximately seven times larger than any anomalous Nernst thermopower value ever reported for a conventional ferromagnet. Combined electrical, thermoelectric, and first-principles calculations reveal that this high-value of the ANE arises from a large net Berry curvature near the Fermi level associated with nodal lines and Weyl points.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science,Modeling and Simulation,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Reference39 articles.
1. Rowe, D. M. CRC Handbook of Thermoelectrics. CRC Handbook of Thermoelectrics. (CRC Press, Boca Raton, FL, 1995).
2. Nolas, G. S., Sharp, J. & Goldsmid, J. Thermoelectrics: Basic Principles and New Materials Developments, Springer series in materials science Vol. 45, Chapter 1 (Springer Science & Business Media, 2013).
3. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous Hall effect. Rev. Mod. Phys. 82, 1539–1592 (2010).
4. Pu, Y., Chiba, D., Matsukura, F., Ohno, H. & Shi, J. Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors. Phys. Rev. Lett. 101, 117208 (2008).
5. Xiao, D., Yao, Y., Fang, Z. & Niu, Q. Berry-phase effect in anomalous thermoelectric transport. Phys. Rev. Lett. 97, 026603 (2006).
Cited by
209 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献