High photoresponsivity in an all-graphene p–n vertical junction photodetector-Reference-Cited by-同舟云学术

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High photoresponsivity in an all-graphene p–n vertical junction photodetector

Published:2014-02-12 Issue:1 Volume:5 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Kim Chang Oh,Kim Sung,Shin Dong Hee,Kang Soo Seok,Kim Jong Min,Jang Chan Wook,Joo Soong Sin,Lee Jae Sung,Kim Ju Hwan,Choi Suk-Ho,Hwang Euyheon

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms4249.pdf

Reference28 articles.

1. Zimmermann, H. Integrated Silicon Optoelectronics 29–153Springer (2000).

2. Snyman, L. W. et al. Optical sources, integrated optical detectors and optical waveguides in standard silicon CMOS integrated circuitry. Proc. SPIE 3953, 20–36 (2000).

3. Xia, F., Mueller, T., Lin, Y. M., Valdes-Garcia, A. & Avouris, P. Ultrafast graphene photodetector. Nat. Nanotechnol. 4, 839–843 (2009).

4. Mueller, T., Xia, F. & Avouris, P. Graphene photodetectors for high-speed optical communications. Nat. Photon. 4, 297–301 (2010).

5. Sun, D. et al. Ultrafast hot-carrier-dominated photocurrent in graphene. Nat. Nanotechnol. 7, 114–118 (2012).

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