Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning-Reference-Cited by-同舟云学术

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning

Published:2014-02-03 Issue:1 Volume:5 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Suyatin Dmitry B.,Jain Vishal,Nebol’sin Valery A.,Trägårdh Johanna,Messing Maria E.,Wagner Jakob B.,Persson Olof,Timm Rainer,Mikkelsen Anders,Maximov Ivan,Samuelson Lars,Pettersson Håkan

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms4221.pdf

Reference57 articles.

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3. Tung, R. T. Recent advances in Schottky barrier concepts. Mater. Sci. Eng. R Rep. 35, 1–138 (2001).

4. Landman, U., Barnett, R. N., Scherbakov, A. G. & Avouris, P. Metal-semiconductor nanocontacts: silicon nanowires. Phys. Rev. Lett. 85, 1958–1961 (2000).

5. Léonard, F. & Tersoff, J. Role of Fermi-level pinning in nanotube Schottky diodes. Phys. Rev. Lett. 84, 4693–4696 (2000).

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