Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission-Reference-Cited by-同舟云学术

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Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission

Published:2014-02-24 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Johansson Leif I.,Armiento Rickard,Avila Jose,Xia Chao,Lorcy Stephan,Abrikosov Igor A.,Asensio Maria C.,Virojanadara Chariya

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep04157.pdf

Reference30 articles.

1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nature Mater. 6, 183–191 (2007).

2. Neto, A. H. C., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).

3. Berger, C. et al. Electronic Confinement and Coherence in Patterned Epitaxial Graphene. Science 312, 1191–1196 (2006).

4. Virojanadara, C. et al. Homogeneous large-area graphene layer growth on 6H-SiC(0001). Phys. Rev. B 78, 245403 (2008).

5. Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Mater. 8, 203 (2009).

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