Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe2

Abstract

AbstractMonolayer iron germanium telluride Fe3GeTe2, one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe3GeTe2 films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probe for magnetic order. Ferromagnetic states exist in 1–10 layer thick Fe3GeTe2, with Curie temperatures ranging from ~75 K in one layer samples to above 175 K in ten layer samples. A single ferromagnetic phase with significant magnetic anisotropy is revealed for all layer numbers. We submit the capability of synthesizing, wafer-scale Fe3GeTe2 as an essential step towards its fulfillment in any applications involving magnetism, such as spintronics.